IRFZ46ZS Datasheet, PDF (1/12 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 94769
AUTOMOTIVE MOSFET
IRFZ46Z
IRFZ46ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
IRFZ46ZL
HEXFET^® Power MOSFET
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
D
V_DSS = 55V
O Repetitive Avalanche Allowed up to Tjmax
Description
G
R_DS(on) = 13.6mΩ
Specifically designed for Automotive applica-
tions, this HEXFET^® Power MOSFET utilizes the
latest processing techniques to achieve extremely
S
I_D = 51A
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
TO-220AB
IRFZ46Z
D²Pak
IRFZ46ZS
TO-262
IRFZ46ZL
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
51
A
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (See Fig. 9)
36
I_DM
c Pulsed Drain Current
200
P_D @T_C = 25°C Maximum Power Dissipation
82
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
0.54
± 20
63
97
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
T_J
Operating Junction and
-55 to + 175
°C
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
R_θJC
Junction-to-Case
–––
R_θCS
Case-to-Sink, Flat, Greased Surface
0.50
R_θJA
Junction-to-Ambient
–––
R_θJA
j Junction-to-Ambient (PCB Mount, steady state)
–––
HEXFET^® is a registered trademark of International Rectifier.
1.84
°C/W
–––
62
40
www.irf.com
1
09/12/03