IRFZ46ZPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRFZ46ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 13.6mΩ
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
S
I_D = 51A
TO-220AB
IRFZ46ZPbF
D²Pak
TO-262
IRFZ46ZSPbF IRFZ46ZLPbF
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
51
A
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (See Fig. 9)
36
I_DM
c Pulsed Drain Current
200
P_D @T_C = 25°C Maximum Power Dissipation
82
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
0.54
± 20
63
97
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
R_θJC
Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
Typ.
–––
0.50
–––
–––
Max.
1.84
–––
62
40
Units
°C/W
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1
09/21/10