IRFZ44Z Datasheet, PDF (1/12 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

PD - 94797
AUTOMOTIVE MOSFET
IRFZ44Z
IRFZ44ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applica-
tions, this HEXFET^® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
IRFZ44ZL
HEXFET^® Power MOSFET
D
V_DSS = 55V
G
R_DS(on) = 13.9mΩ
S
I_D = 51A
TO-220AB
IRFZ44Z
D²Pak
IRFZ44ZS
TO-262
IRFZ44ZL
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (See Fig. 9)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/8/03