IRFZ44VZPBF Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 60V , RDS(on) = 12mΩ , ID = 57A )

AUTOMOTIVE MOSFET
PD - 95947
IRFZ44VZPbF
IRFZ44VZSPbF
IRFZ44VZLPbF
Features
l Advanced Process Technology
HEXFET^® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
D
V_DSS = 60V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
R_DS(on) = 12mΩ
I_D = 57A
S
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
D²Pak
TO-262
IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
57
40
230
92
0.61
± 20
73
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
11/16/04