IRFZ44VS Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)

PD - 94050A
IRFZ44VS
IRFZ44VL
l Advanced Process Technology
HEXFET^® Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
D
V_DSS = 60V
l Fast Switching
l Fully Avalanche Rated
G
l Optimized for SMPS Applications
R_DS(on) = 16.5mΩ
I_D = 55A
S
Description
Advanced HEXFET^® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D²Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D²Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
D²Pak
IRFZ44VS
TO-262
IRFZ44VL
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55
39
220
115
0.77
± 20
115
55
11
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
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1
01/04/02