IRFZ44ESPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

PD - 95572
IRFZ44ESPbF
IRFZ44ELPbF
l Advanced Process Technology
HEXFET^® Power MOSFET
l Surface Mount (IRFZ44ES)
l Low-profile through-hole (IRFZ44EL)
D
V_DSS = 60V
l 175°C Operating Temperature
l Fast Switching
R_DS(on) = 0.023Ω
l Fully Avalanche Rated
G
l Lead-Free
I_D = 48A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D²Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D²Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
D ² Pak
TO-262
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V…
Continuous Drain Current, V_GS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R_θJC
R_θCS
R_θJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
48
34
192
110
0.71
± 20
220
29
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04