IRFZ34N Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

PRELIMINARY
HEXFET^® Power MOSFET
PD - _____
IRFZ34N
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
V_DSS = 55V
R_DS(on) = 0.040Ω
I_D = 26A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V _GS @ 10V
Continuous Drain Current, V _GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
26
18
100
56
0.37
±20
110
16
5.6
4.6
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.7
––––
62
Units
°C/W
8/29/95