IRFZ24VS Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
Advanced HEXFET^® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
PD - 94182
IRFZ24VS
IRFZ24VL
HEXFET^® Power MOSFET
D
V_DSS = 60V
R_DS(on) = 60mΩ
I_D = 17A
S
The D²Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
D²Pak
IRFZ24VS
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V‡
Continuous Drain Current, V_GS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
44
0.29
± 20
17
4.4
4.2
-55 to + 175
300 (1.6mm from case )
TO-262
IRFZ24VL
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
www.irf.com
Typ.
–––
–––
Max.
3.4
40
Units
°C/W
1
02/14/02