IRFY9240CM Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A)

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Provisional Data Sheet No. PD 9.1295A
HEXFET^® POWER MOSFET
IRFY9240CM
P-CHANNEL
-200Volt, 0.51Ω HEXFET
International Rectifier’s HEXFET technology is the key to
its advanced line of power MOSFET transistors.The effi-
cient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET power MOSFETs also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high en-
ergy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET power MOSFET’s totally isolated package
eliminates the need for additional isolating material between
the device and the heatsink. This improves ther mal effi-
ciency and reduces drain capacitance.
Product Summary
Part Number
BV_DSS
IRFY9240CM
-200V
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
R_DS(on) I_D
0.51Ω -9.4A
Absolute Maximum Ratings
ID @ VGS= -10V, TC = 25°C
ID @ VGS= -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Parameter
IRFY9240CM
Continuous Drain Current
-9.4
Continuous Drain Current
-6.0
Pulsed Drain Current 
-36
Max. Power Dissipation
100
Linear Derating Factor
0.8
Gate-to-Source Voltage
±20
Single Pulse Avalance Energy ‚
700
Avalance Current 
-9.4
Repetitive Avalanche Energy 
10
Peak Diode Recovery dv/dt ƒ
-5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
g
* I_D current limited by pin diameter
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