IRFY9140 Datasheet, PDF (1/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

PD - 94197C
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on)
IRFY9140
IRFY9140M
0.20 Ω
0.20 Ω
ID
-15.8A
-15.8A
Eyelets
Glass
Glass
IRFY9140, IRFY9140M
100V, P-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Glass Eyelets
n For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY9140C, IRFY9140CM
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-15.8
-10
-60
100
0.8
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
640
Avalanche Current À
-15.8
Repetitive Avalanche Energy À
10
Peak Diode Recovery dv/dt Â
-5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300(0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
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1
01/18/07