IRFY9130C_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

PD-91293C
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on) ID Eyelets
IRFY9130C
IRFY9130CM
0.3 Ω
0.3 Ω
-11.2A Ceramic
-11.2A Ceramic
IRFY9130C, IRFY9130CM
100V, P-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers,
high energy pulse circuits, and virtually any application where
high reliability is required. The HEXFET transistor’s totally
isolated package eliminates the need for additional isolating
material between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
TO-257AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
-11.2
-7.1
-44
75
0.6
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
±20
400
-11.2
7.5
-5.5
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300(0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
For footnotes, refer to the last page
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1
02/09/10