IRFY440CM Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)

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Provisional Data Sheet No. PD 9.1292B
HEXFET^® POWER MOSFET
IRFY440CM
N-CHANNEL
500 Volt, 0.85Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY440CM
BVDSS
500V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
RDS(on)
0.85Ω
ID
7.0A
Absolute Maximum Ratings
Parameter
IRFY440CM
ID @ VGS=10V, TC = 25°C
Continuous Drain Current
7.0
ID @ VGS=10V, TC = 100°C Continuous Drain Current
4.4
IDM
Pulsed Drain Current 
28
PD @ TC = 25°C
Max. Power Dissipation
100
Linear Derating Factor
0.8
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
±20
Single Pulse Avalance Energy ‚
510
Avalance Current 
7.0
Repetitive Avalanche Energy 
10
Peak Diode Recovery dv/dt ƒ
3.5
TJ
Tstg
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
g
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