IRFY430CM Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

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Provisional Data Sheet No. PD 9.1291B
HEXFET^® POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY430CM
BVDSS
500V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
RDS(on)
1.5Ω
ID
4.5A
Absolute Maximum Ratings
Parameter
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Gate-to-Source Voltage
Single Pulse Avalance Energy ‚
Avalance Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRFY430CM
4.5
2.8
18
75
0.6
±20
280
4.5
7.5
3.5
-55 to 150
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
To Order
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
°C
g