IRFY044C_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

PD - 91285D
POWER MOSFET
THRU-HOLE (TO-257AA)
IRFY044C,IRFY044CM
60V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFY044C
IRFY044CM
0.040 Ω
0.040 Ω
ID
16*A
16*A
Eyelets
Ceramic
Ceramic
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
16*
16*
A
156
100
W
0.8
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ➁
100
mJ
Avalanche Current ➀
16*
A
Repetitive Avalanche Energy ➀
10
mJ
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
4.5
-55 to 150
V/ns
o_C
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
g
* Current is limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
4/18/01