IRFY044CM Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)

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Provisional Data Sheet No. PD 9.1285C
HEXFET^® POWER MOSFET
IRFY044CM
N-CHANNEL
60 Volt, 0.040Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY044CM
BVDSS
60V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
RDS(on)
0.040Ω
ID
16A*
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Parameter
IRFY044CM
Continuous Drain Current
16*
Continuous Drain Current
16*
Pulsed Drain Current 
156
Max. Power Dissipation
100
Linear Derating Factor
0.8
Gate-to-Source Voltage
±20
Single Pulse Avalance Energy ‚
100
Avalance Current 
16*
Repetitive Avalanche Energy 
10
Peak Diode Recovery dv/dt ƒ
4.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
g
* I_D current limited by pin diameter
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