IRFU12N25D Datasheet, PDF (1/10 Pages) International Rectifier – SMPS MOSFET

PD - 94296A
SMPS MOSFET
IRFR12N25D
IRFU12N25D
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS R_DS(on) max
I_D
250V
0.26Ω
14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR12N25D IRFU12N25D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
14
9.7
56
144
0.96
± 30
9.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
°C/W
1
09/21/01