IRFSL5615PBF Datasheet, PDF (1/9 Pages) International Rectifier – DIGITAL AUDIO MOSFET

DIGITAL AUDIO MOSFET
PD - 96204
IRFS5615PbF
IRFSL5615PbF
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low R_DSON for Improved Efficiency
• Low Q_G and Q_SW for Better THD and Improved
Efficiency
• Low Q_RR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier
Key Parameters
V_DS
R_DS(ON) typ. @ 10V
150
V
34.5
m:
Q_g typ.
26
nC
Q_sw typ.
11
nC
R_G(int) typ.
2.7
Ω
T_J max
175
°C
D
D
D
G
S
S
D
G
G
S
D²Pak
TO-262
IRFS5615PbF _IRFSL5615PbF
G
D
S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
R_θJC
R_θJA
f ^Parameter
Junction-to-Case
h Junction-to-Ambient (PCB Mount)
Notes  through † are on page 2
www.irf.com
Max.
150
±20
33
24
140
144
72
0.96
-55 to + 175
300
Typ.
–––
–––
Max.
1.045
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/18/08