IRFSL4229PBF Datasheet, PDF (1/8 Pages) International Rectifier – High Repetitive Peak Current Capability for Reliable Operation

PD - 96285
IRFSL4229PbF
Features
l Advanced Process Technology
Key Parameters
l Low Q_G for Fast Response
V_DS min
250
V
l High Repetitive Peak Current Capability for
V_{DS (Avalanche)} typ.
300
V
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
R_DS(ON) typ. @ 10V
42
I_RP max @ T_C= 100°C
91
m:
A
Improved Ruggedness
T_J max
175
°C
l Repetitive Avalanche Capability for Robustness
and Reliability
D
D
S
G
D
G
G
Gate
S
TO-262
IRFSL4229PbF
D
Drain
S
Source
Description
This HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve low on-resistance
per silicon area. Additional features of this MOSFET are 175°C operating juntion temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust
and reliable device.
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
I_RP @ T_C = 100°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
R_θJA
f Junction-to-Case
f Junction-to-Ambient
Max.
±30
45
32
180
91
330
190
2.2
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
–––
Max.
0.45*
62
* R_θJC (end of life) for TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 8
www.irf.com
Units
V
A
W
W/°C
°C
N
Units
1
01/04/10