|
IRFS52N15DPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – High frequency DC-DC converters | |||
|
PD - 97002A
Applications
l High frequency DC-DC converters
l Plasma Display Panel
Benefits
l Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche
Voltage and Current
l Lead-Free
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
HEXFET® Power MOSFET
Key Parameters
VDS
150
V
VDS (Avalanche) min.
200
V
RDS(ON) max @ 10V
32
m:
TJ max
175
°C
TO-220AB
IRFB52N15DPbF
D2Pak
TO-262
IRFS52N15DPbF IRFSL52N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V Â
Continuous Drain Current, VGS @ 10V Â
Pulsed Drain Current Â
Power Dissipation Â
Power Dissipation Â
Linear Derating Factor Â
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screwÂ
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface Â
Junction-to-AmbientÂ
Junction-to-AmbientÂ
Max.
51*
36*
240
3.8
230*
1.5*
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Typ.
âââ
0.50
âââ
âââ
Max.
0.47*
âââ
62
40
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through  are on page 11
www.irf.com
1
09/22/10
|
▷ |