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IRFS4610 Datasheet, PDF (1/11 Pages) International Rectifier – IRFB4610 IRFS4610 IRFSL4610
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
G
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
PD - 96906B
IRFB4610
IRFS4610
IRFSL4610
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
100V
11m:
14m:
73A
G DS
TO-220AB
IRFB4610
G DS
D2Pak
IRFS4610
G DS
TO-262
IRFSL4610
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current f
Maximum Power Dissipation
Linear Derating Factor
VGS
dV/dt
Gate-to-Source Voltage
Peak Diode Recovery e
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy d
IAR
Avalanche Current c
EAR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case j
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA
Junction-to-Ambient, TO-220 j
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max.
73
52
290
190
1.3
± 20
7.6
-55 to + 175
300
10lbxin (1.1Nxm)
370
See Fig. 14, 15, 16a, 16b,
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
11/3/04