IRFS4229PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

PD - 97080B
PDP SWITCH
IRFS4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E_PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q_G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
V_DS min
250
V
V_{DS (Avalanche)} typ.
R_DS(ON) typ. @ 10V
300
V
42
m:
I_RP max @ T_C= 100°C
91
A
T_J max
175
°C
D
D
G
S
S
D
G
D²Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET^® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E_PULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
I_RP @ T_C = 100°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
R_θJA
f Junction-to-Case
f Junction-to-Ambient
Max.
±30
45
32
180
91
330
190
2.2
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
–––
Max.
0.45*
62
* R_θJC (end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 9
www.irf.com
Units
V
A
W
W/°C
°C
N
Units
1
09/16/08