IRFS4115TRLPBF Datasheet, PDF (1/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96198A
IRFS4115PbF
IRFSL4115PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
150V
10.3m:
12.1m:
I_{D (Silicon Limited)}
c 99A
S ^{ID (Package Limited) 195A}
D
S
G
D²Pak
IRFS4115PbF
D
S
D
G
TO-262
IRFSL4115PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ãd I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
kl Junction-to-Case
jk Junction-to-Ambient
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D
Drain
S
Source
Max.
99™
70 ™
195
396
375
2.5
± 20
18
-55 to + 175
300
x x 10lb in (1.1N m)
830
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
03/09/11