IRFRU9310 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

PRELIMINARY
l P-Channel
l Surface Mount (IRFR9310)
l Straight Lead (IRFU9310)
l Advanced Process Technology
l Fast Switching
G
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD 9.1663
IRFR/U9310
HEXFET^® Power MOSFET
D
V_DSS = -400V
R_DS(on) = 7.0Ω
S
I_D = -1.8A
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-1.8
-1.1
-7.2
50
0.40
± 20
92
-1.8
5.0
-24
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
°C/W
7/30/97