IRFR4620PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -96207A
IRFR4620PbF
IRFU4620PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
200V
64m:
78m:
S ^ID
24A
D
D
S
G
DPak
IRFR4620PbF
S
D
G
IPAK
IRFU4620PbF
G
Gate
D
Drain
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
c I_AR
Avalanche Current
c E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
24
17
100
144
0.96
± 20
54
-55 to + 175
300
113
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through ˆ are on page 11
www.irf.com
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
06/08/09