IRFR4104PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
PD - 95425B
IRFR4104PbF
IRFU4104PbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 5.5mΩ
I_D = 42A
S
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design
an extremely efficient and reliable device for use in a
wide variety of applications.
D-Pak
I-Pak
IRFR4104PbF IRFU4104PbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
i ^{Junction-to-Case}
Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
119
84
42
480
140
0.95
± 20
145
310
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/21/10