IRFR3607PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97312
IRFR3607PbF
IRFU3607PbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
75V
7.34mΩ
9.0mΩ
80Ac
56A
D
S
S
D
G
G
D-Pak
I-Pak
IRFR3607PbF IRFU3607PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θJA
Junction-to-Ambient j
R_θJA
Junction-to-Ambient (PCB Mount) jk
Max.
80c
56c
56
310
140
0.96
± 20
27
-55 to + 175
300
120
46
14
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
03/04/08