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IRFR3504TRPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology | |||
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PD - 95315B
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
G
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this product are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
IRFR3504PbF
IRFU3504PbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 9.2mâ¦
ID = 30A
S
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR3504PbF
I-Pak
IRFU3504PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Single Pulse Avalanche Energy Tested ValueÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
87
61
30
350
140
0.92
± 20
240
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)Â
Junction-to-Ambient
Typ.
âââ
âââ
âââ
Max.
1.09
50
110
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
09/21/10
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