IRFR2607ZPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

PD - 95953A
IRFR2607ZPbF
IRFU2607ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 22mΩ
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I_D = 42A
S
D-Pak
I-Pak
IRFR2607ZPbF IRFU2607ZPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Max.
45
32
42
180
110
0.72
± 20
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
R_θJC
R_θJA
R_θJA
j Junction-to-Case
ij Junction-to-Ambient (PCB mount)
j Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
1
09/16/10