IRFR2307ZPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

PD - 96191B
IRFR2307ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
IRFU2307ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 75V
R_DS(on) = 16mΩ
G
I_D = 42A
S
D-Pak
I-Pak
IRFR2307ZPbF IRFU2307ZPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
d ^VGS
Gate-to-Source Voltage
E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested )
I_AR
E_AR
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
53
38
42
210
110
0.70
± 20
100
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.42
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/16/10