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IRFR15N20D Datasheet, PDF (1/10 Pages) International Rectifier – SMPS MOSFET
PD - 94245
SMPS MOSFET
IRFR15N20D
IRFU15N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS RDS(on) max
ID
200V
0.165Ω
17A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR15N20D IRFU15N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
17
12
68
140
3.0
0.96
± 30
8.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
°C/W
1
7/25/01