IRFR120NTRRPBF Datasheet, PDF (1/11 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
l Straight Lead (IRFU5305)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET^® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R_θJC
R_θJA
R_θJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
PD-95025A
IRFR5305PbF
IRFU5305PbF
HEXFET^® Power MOSFET
D
V_DSS = -55V
R_DS(on) = 0.065Ω
I_D = -31A
S
D-Pak
IRFR5305
I-Pak
IRFU5305
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/13/04