IRFP90N20D Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A⑥)

PD - 94301A
SMPS MOSFET _IRFP90N20D
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS
200V
R_DS(on) max
0.023Ω
I_D
94A^o
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
94o
66
380
580
3.8
± 30
6.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
Notes  through o are on page 8
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1
09/27/01