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| IRFP32N50K Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) | |||
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PD - 94099A
Applications
SMPS MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
500V
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low RDS(on)
IRFP32N50K
HEXFET® Power MOSFET
RDS(on)typ.
ID
0.135â¦
32A
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
32
20
130
460
3.7
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
10lb*in (1.1N*m)
Typ.
âââ
âââ
âââ
Typ.
âââ
0.24
âââ
Max.
450
32
46
Max.
0.26
âââ
40
Units
mJ
A
mJ
Units
°C/W
1
05/24/01
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