IRFP3006PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
60V
2.1m
2.5m
270A
195A
IRFP3006PbF
D
G
S
S
D
G
TO-247AC
Applications
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply
 High Speed Power Switching
 Hard Switched and High Frequency Circuits
G
Gate
D
Drain
S
Source
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free
Base Part Number
IRFP3006PbF
Package Type
TO-247
Standard Pack
Form
Tube
Quantity
25
Orderable Part Number
IRFP3006PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V(Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery 
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Thermal Resistance
R_JC
R_CS
R_JA
Symbol
Parameter
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
1 www.irf.com © 2013 International Rectifier
Max.
270
190
195
1080
375
2.5
± 20
10
-55 to + 175
300
10lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
320
mJ
See Fig. 14, 15, 22a, 22b
A
mJ
Typ.
–––
0.24
–––
Max.
0.4
–––
40
Units
°C/W
September 06, 2013