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IRFP2907PBF Datasheet, PDF (1/10 Pages) International Rectifier – AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5mΩ , ID = 209A) | |||
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PD -95050
IRFP2907PbF
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
Typical Applications
â Integrated Starter Alternator
â 42 Volts Automotive Electrical Systems
â Lead-Free
Benefits
G
â Advanced Process Technology
â Ultra Low On-Resistance
â Dynamic dv/dt Rating
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Avalanche Current
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
D
VDSS = 75V
RDS(on) = 4.5mâ¦
ID = 209AÂ
S
TO-247AC
Max.
209Â
148Â
840
470
3.1
± 20
1970
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
âââ
0.24
âââ
Max.
0.32
âââ
40
Units
°C/W
1
2/26/04
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