IRFP23N50LPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )

PD - 94999
IRFP23N50LPbF
Applications
SMPS MOSFET
HEXFET^® Power MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
• Uninterruptible Power Supplies
• Motor Control applications
500V 0.190Ω 170ns 23A
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
23
15
92
370
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.9
± 30
14
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x 10lb in (1.1N m)
Symbol
I_S
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 23
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
––– ––– 92
––– ––– 1.5
integral reverse
p-n junction diode.
f V T_J = 25°C, I_S = 14A, V_GS = 0V
t_rr
Reverse Recovery Time
f ^{––– 170 250 ns TJ = 25°C, IF = 23A}
––– 220 330
T_J = 125°C, di/dt = 100A/µs
Q_rr
Reverse Recovery Charge
f ––– 560 840 nC T_J = 25°C, I_S = 23A, V_GS = 0V
f _{––– 980 1500}
T_J = 125°C, di/dt = 100A/µs
I_RRM
Reverse Recovery Current
––– 7.6 11 A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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02/11/04