IRFP22N60KPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94876
IRFP22N60KPbF
Applications
SMPS MOSFET
HEXFET^® Power MOSFET
l Hard Switching Primary or PFS Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
V_DSS R_DS(on) typ. I_D
600V
240mΩ
22A
l High Speed Power Switching
l Motor Drive
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
22
14
88
370
2.9
± 30
15
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
380
22
37
Units
mJ
A
mJ
Max.
0.34
–––
40
Units
°C/W
1
12/9/03