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IRFP17N50LPBF Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET HEXFET®Power MOSFET | |||
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PD - 95662
IRFP17N50LPbF
Applications
SMPS MOSFET HEXFET® Power MOSFET
⢠Zero Voltage Switching SMPS
⢠Telecom and Server Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor Control applications
VDSS RDS(on) typ. Trr typ. ID
500V 0.28⦠170ns 16A
⢠Lead-Free
Features and Benefits
⢠SuperFast body diode eliminates the need for external
diodes in ZVS applications.
⢠Lower Gate charge results in simpler drive requirements.
⢠Enhanced dv/dt capabilities offer improved ruggedness.
⢠Higher Gate voltage threshold offers improved noise
immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
 Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
16
11
64
220
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
1.8
± 30
13
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x 10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
âââ âââ 16
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 64
âââ âââ 1.5
integral reverse
p-n junction diode.
f V TJ = 25°C, IS = 16A, VGS = 0V
trr
Reverse Recovery Time
f âââ 170 250 ns TJ = 25°C, IF = 16A
âââ 220 330
TJ = 125°C, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
f âââ 470 710 nC TJ = 25°C, IS = 16A, VGS = 0V
f âââ 810 1210
TJ = 125°C, di/dt = 100A/µs
IRRM
Reverse Recovery Current
âââ 7.3 11 A TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
07/30/04
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