IRFP17N50L Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

PD - 94322
IRFP17N50L
Applications
SMPS MOSFET _{HEXFET® Power MOSFET}
l
l
Switch Mode Power Supply (SMPS)
Zero Voltage Switching (ZVS) and High
V_DSS
Frequency Circuit
500V
R_DS(on) typ. T_rr typ. I_D
0.28Ω
170ns 16A
l Uninterruptible Power Supply
l High Speed Power Switching
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Parameter
Max.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
16
11
64
220
1.8
± 30
13
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
-55 to + 150
300
Mounting Torque, 6-32 or M3 screw
10
TO-247AC
Units
A
W
W/°C
V
V/ns
°C
lbft.in(N.m)
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
t_on
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
MOSFET symbol
D
––– –––
A ^{showing the}
64
integral reverse
G
––– –––
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 16A, V_GS = 0V „
––– 170 250
––– 220 330
ns
T_J = 25°C
T_J = 125°C
I_F = 16A
di/dt = 100A/µs „
––– 470 710 _nC T_J = 25°C
––– 810 1210
T_J = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
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1
09/20/01