IRFP1405PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 5.3mΩ
I_D = 95A
S
S
GD
TO-247AC
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case *
R_θcs
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient *
HEXFET^® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
www.irf.com
Max.
160
110
95
640
310
2.0
± 20
530
1060
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/18/10