IRFN3710 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)

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Provisional Data Sheet No. PD-9.1417
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRFN3710
N-CHANNEL
100 Volt, 0.028Ω, HEXFET
Product Summary
Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
Part Number
IRFN3710
BVDSS
100V
RDS(on)
ID
0.028Ω 45A
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed ^Features:
and ruggedized device design for which HEXFETs ^{n Surface Mount}
are well known, provides the designer with an ex- ^{n Small Footprint}
tremely efficient device for use in a wide variety of ^{n Alternative to TO-3 Package}
applications.
n Hermetically Sealed
The Surface Mount Device 1 (SMD-1) package rep-
resents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Lightweight
give designers the extra flexibility they need to in-
crease circuit board density.International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRFN3710
45
28
180
125
1.0
±20
690
27
12.5
5.0
-55 to 150
300 (for 5 sec.)
2.6 (typical)
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
o_C
g