IRFN350_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on) ID
IRFN350
0.315 Ω 14A
PD-91551D
IRFN350
JANTX2N7227U
JANTXV2N7227U
REF:MIL-PRF-19500/592
400V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-
suited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers,
high energy pulse circuits, and virtually any application
where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need
for additional isolating material between the device and
the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temperature
Weight
14
9.0
56
150
1.2
±20
700
14
15
4.0
-55 to 150
300 (for 5 sec)
2.6 (Typical)
For footnotes refer to the last page
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
12/12/07