IRFN054_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

PD-91543C
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRFN054
60V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFN054
0.020 Ω
ID
55A*
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and virtually any
application where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need for
additional isolating material between the device and the
heatsink. This improves thermal efficiency and reduces drain
capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Surface mount
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
*Current is limited by package
For footnotes refer to the last page
www.irf.com
55*
40
220
150
1.2
±20
480
55
15
4.5
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
02/15/10