IRFMJ044 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET SURFACE MOUNT (D3 PAK)

PD-97258
POWER MOSFET
SURFACE MOUNT (D3 PAK)
Product Summary
Part Number RDS(on)
IRFMJ044
0.04 Ω
ID
35A*
IRFMJ044
60V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical
parameter temperature stability. They are well-suited for
applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required. The HEXFET transistor’s totally
isolated package eliminates the need for additional
isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain
capacitance.
D3 PAK
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
n Screened to JANTX Level per
MIL-PRF-19500
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Weight
35*
28
140
125
1.0
±20
340
35
12.5
4.5
-55 to 150
9.3 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
*Current is limited by package
For footnotes refer to the last page
www.irf.com
1
09/13/06