IRFMG50_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

PD-90711C
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFMG50
2.0Ω
5.6A
IRFMG50
1000V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter
temperature stability. They are well-suited for applications
such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, high energy pulse
circuits, and virtually any application where high reliability
is required. The HEXFET transistor’s totally isolated
package eliminates the need for additional isolating
material between the device and the heatsink. This
improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
5.6
3.5
A
22.4
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
860
Avalanche Current À
5.6
Repetitive Avalanche Energy À
15
Peak Diode Recovery dv/dt Â
1.0
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300(0.063in./1.6mm from case for 10 sec)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
06/23/08