IRFMG50 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)

PD - 90711B
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFMG50
2.0Ω
5.6A
IRFMG50
1000V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
5.6
3.5
A
22
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ➁
860
mJ
Avalanche Current ➀
5.6
A
Repetitive Avalanche Energy ➀
15
mJ
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
1.0
-55 to 150
V/ns
o_C
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
4/17/01