IRFM260_15 Datasheet, PDF (1/7 Pages) International Rectifier – Simple Drive Requirements

PD - 91388C
POWER MOSFET
THRU-HOLE (TO-254AA)
IRFM260
200V, N-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFM260
0.060 Ω
ID
35A*
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-
suited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers,
high energy pulse circuits, and virtually any application
where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need
for additional isolating material between the device and
the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
35*
28
A
140
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
700
Avalanche Current À
35
Repetitive Avalanche Energy À
25
Peak Diode Recovery dv/dt Â
4.3
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by Package
For footnotes refer to the last page
www.irf.com
1
01/18/07