IRFM260 Datasheet, PDF (1/8 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRFM260
N-CHANNEL
200Volt, 0.060Ω, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number BVDSS
IRFM260
200V
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelet
RDS(on)
0.060Ω
ID
35A*
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
Pre-Radiation
IRFM260
Units
35*
28
A
180
250
W
2.0
W/K …
±20
V
700
mJ
35
A
25
mJ
4.3
V/ns
-55 to 150
o_C
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g