IRFL9110PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = -100V , RDS(on) = 1.2Ω , ID = -1.1A )

PD - 95320
IRFL9110PbF
HEXFET^® Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
G
Lead-Free
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
I_D @ Tc = 25°C
I_D @ Tc = 100°C
I_DM
P_D @Tc = 25°C
P_D @T_A = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -10 V
Continuous Drain Current, V_GS @ -10 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
D
V_DSS = -100V
R_DS(on) = 1.2Ω
I_D = -1.1A
S
SOT-223
Max.
-1.1
-0.69
-8.8
3.1
2.0
0.025
0.017
-/+20
100
-1.1
0.31
-5.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
R_θJC
Junction-to-PCB
–––
R_θJA
Junction-to-Ambient. (PCB Mount)**
–––
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Max.
40
60
Units
°C/W
1
05/26/04