IRFL4315PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
V_DSS
150V
PD - 95258
IRFL4315PbF
HEXFET^® Power MOSFET
R_DS(on) max
I_D
185mW@V_GS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
SOT-223
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.6
2.1
21
2.8
0.02
± 30
6.3
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R_θJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)„
Typ.
–––
Notes  through † are on page 8
www.irf.com
Max.
45
Units
°C/W
1
05/24/04